Samsung investors presentation on June 4, 2018 in Singapore talks about an interesting development at the company's S4 fab:
"S4 line provides CMOS image sensor using 45-nanometer and below process node, and we are building EUV line. We started constructing in February this year."
Samsung has been using 28nm design rules in its image sensors for quite a some time. EUV seems to be a natural next step to avoid double patterning limitations on the pixel layout (double patterning is commonly used starting from 22nm node.)
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